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| STB/P8444 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 80A RDS(ON) (m) Max 4.8 @ VGS=10V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 40 20 TC=25C 80 264 306 TC=25C 62 -55 to 150 Units V V A A mJ W C Sigle Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.8 62.5 C/W C/W Details are subject to change without notice. Mar,26,2008 1 www.samhop.com.tw STB/P8444 Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=32V , VGS=0V 40 1 100 uA nA VGS= 20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) tr tD(OFF) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c c VDS=VGS , ID=250uA VGS=10V , ID=80A VDS=5V , ID=80A 2 2.8 3.5 20 4 4.8 V m ohm S VDS=20V,VGS=0V f=1.0MHz 6500 940 500 pF pF pF VDD=20V ID=1A VGS=10V RGEN=6 ohm VDS=20V,ID=25A,VGS=10V VDS=20V,ID=25A, VGS=10V 185 162 185 50 110 20 26 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD VGS=0V,IS=10A Diode Forward Voltage 0.8 1.3 V Notes a.Maximum wire current carrying capacity is 80A. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,RG=25,IAS=35A,VDD = 20V.(See Figure13) Mar,26,2008 2 www.samhop.com.tw STB/P8444 Ver 1.0 120 20 16 V G S =10V ID, Drain Current(A) ID, Drain Current(A) 96 72 V G S =6V V G S =5V 12 25 C 8 Tj=125 C 4 -55 C 48 24 0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 7 2.0 Figure 2. Transfer Characteristics 5 4 3 2 1 V G S =10V RDS(ON), On-Resistance Normalized 6 1.8 1.6 1.4 1.2 1.0 0.0 V G S =10V ID= 80 A RDS(on) (m W) 1 24 48 72 96 120 0 25 50 75 100 125 150 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) BVDSS, Normalized Drain-Source Breakdown Voltage Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Mar,26,2008 3 www.samhop.com.tw STB/P8444 Ver 1.0 12 20.0 ID=80 A Is, Source-drain current (A) 10 10.0 RDS(on) (m W) 8 6 4 75 C 2 0 25 C 125 C 125 125 C 25 C 75 C 0 2 4 6 8 10 1.0 0.0 0.2 0.4 0.6 0.8 1.0 VGS, Gate-Sorce Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 9000 7500 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage (V) C, Capacitance (pF) Cis s 8 6 4 2 0 VDS = 20V ID = 25A 6000 4500 3000 1500 0 0 C rs s 5 10 15 20 25 30 Cos s 0 20 40 60 80 100 120 140 160 VDS, Drain-to Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 2200 Tr 1000 it 10 1m 10 m DC s s Switching Time (ns) ID, Drain Current (A) 1000 600 100 TD(off) 100 R TD(on) DS ( ) ON L im 0u s Tf 10 V G S =10V S ingle P ulse T c=25 C 10 1 V DS =20V ,ID=1A V G S =10V 6 10 60 100 300 600 1 0.1 1 10 100 Rg, Gate Resistance() VDS, Drain-Source Voltage (V) Figure 11.switching characteristics Figure 12. Maximum Safe Operating Area Mar,26,2008 4 www.samhop.com.tw STB/P8444 Ver 1.0 15V V (B R )DS S tp DR IV E R V DS L RG 20V D.U.T IAS tp 0.01 + V DD - IAS Unclamped Inductive Waveforms Figure 13b. Unclamped Inductive Test Circuit Figure 13a. 2 1 D=0.5 r(t),Normalized E ffective T ransient T hermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e P DM t1 t2 1. 2. 3. 4. R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 S quare Wave P uls e Duration (ms ec) F igure 14. Normalized T hermal T rans ient Impedance C urve Mar,26,2008 5 www.samhop.com.tw STB/P8444 Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-220 Mar,26,2008 6 www.samhop.com.tw STB/P8444 Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-263AB Mar,26,2008 7 www.samhop.com.tw STB/P8444 Ver 1.0 TO-220/263AB Tube 17.5 7.67 + 0.20 5.70 2.35 15.7 + 0.2 7.2 + 0.1 3.7 + 0.2 5.4 + 0.2 3.5 + 0.2 2.6 5.60 + 0.20 12.40 2.6 + 0.2 5.40 + 0. 0.5 + 0.1 536 + 1 5.10 4.30 2.50 ANTISTATIC 1.70 5.80 32 Mar,26,2008 8 www.samhop.com.tw |
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